SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
A new approach to designing a synchronous rectifier will help engineers unlock efficiency gains that extend beyond ...
This application note is both an introduction and overview of Fairchild’s new generation of Super-Junction MOSFETs, SuperFET II and SuperFET II Easy Drive MOSFETs. The architecture of each will be ...
Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...
Nick Perosino, New Product Development Manager at Central Semiconductor (an AEM Company), recently presented a webinar on ...
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